QuDSim 1.0
3D Quantum Device Simulator
QuDSim is a TCAD simulator developed at Centre for VLSI and Nanotechnology, VNIT, Nagpur to simulate electrical characteristics of Nanoscale devices. It is Finite-Element-Method (FEM) based tool that solve self-consistent Poisson-Schrodinger equation on 2D/3D device geometry. The quantum tunneling and transport are simulated by solving an open system effective mass Schrodinger equation considering plane waves in reservoirs/contacts.
Mission
Provide simple and easy to use open source TCAD tool for students to get physical insight for existing devices and for researchers to explore new nanodevices by integrating their device geometries, materials, and models.
Features
- The web-based tool requires no high-end machines at the user’s end
- Easy to use Graphical User Interface
- New materials can be added easily
- The tool runs on High-Performance Computer Cluster at VLSI & Nanotechnology Centre
- Free!!!
QuDSim is based on the following open source software packages and platform:
| Components |
Capabilities |
| DUNE-FEM |
Solve any PDE on parallel computers not limited to Poisson-Schrodinger |
| PETSc & SLEPc |
Eigenvalues Solver |
| Third and fourth order polynomial equation |
| The non-homogeneous system of linear equation |
| GMSH |
3D finite element meshing |
| HTML, JavaScript |
Graphical User Interface |
In-built Examples
Few examples available to explore the functionality of the tool
- Bound/Quasi bound energies and wavefunctions for ellipsoidal QD
- Gate leakage current for Gate-All-Around Nanowire FET
- Transmission probability and current for Metal/Insulator/Metal
- Transmission probability and current for Resonant Tunneling Diode
The following examples can also be solved using QuDSim
- High/Low-frequency CV characteristics for planar MOS
- Program/Erase/Retention characteristics of Nanocrystal Flash memory
- Transport calculations (Id-Vd) for planar MOSFET
| Study |
Device application |
| Effect of shape and size on eigenvalues and function |
Any device geometry |
| Dimension effect on I-V and C-V of MOSFET |
Planar/Gate-all-around |
| Program/Erase/Retention of Flash memories |
FG, NC flash |
| Study of DT/FN/TAT tunneling |
Planar/Gate-all-around |
| Effect of mass, barrier height and well width on negative resistance region |
RTDs |
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