QuDSim 1.0

 3D Quantum Device Simulator


QuDSim is a TCAD simulator developed at Centre for VLSI and Nanotechnology, VNIT, Nagpur to simulate electrical characteristics of Nanoscale devices. It is Finite-Element-Method (FEM) based tool that solve self-consistent Poisson-Schrodinger equation on 2D/3D device geometry. The quantum tunneling and transport are simulated by solving an open system effective mass Schrodinger equation considering plane waves in reservoirs/contacts.



Provide simple and easy to use open source TCAD tool for students to get physical insight for existing devices and for researchers to  explore new nanodevices by integrating their device geometries, materials, and models.



  • The web-based tool requires no high-end machines at the user’s end
  • Easy to use Graphical User Interface
  • New materials can be added easily
  • The tool runs on High-Performance Computer Cluster at VLSI & Nanotechnology Centre
  • Free!!!


QuDSim is based on the following open source software packages and platform:

Components Capabilities
   DUNE-FEM    Solve any PDE on parallel computers not limited to Poisson-Schrodinger
   PETSc & SLEPc   Eigenvalues Solver
  Third and fourth order polynomial equation
  The non-homogeneous system of linear equation
   GMSH   3D finite element meshing
   HTML, JavaScript   Graphical User Interface


In-built Examples

Few examples available to explore the functionality of the tool

  • Bound/Quasi bound energies and wavefunctions for ellipsoidal QD
  • Gate leakage current for Gate-All-Around Nanowire FET
  • Transmission probability and current for Metal/Insulator/Metal
  • Transmission probability and current for Resonant Tunneling Diode

The following examples can also be solved using QuDSim

  • High/Low-frequency CV characteristics for planar MOS
  • Program/Erase/Retention characteristics of Nanocrystal Flash memory
  • Transport calculations (Id-Vd) for planar MOSFET


Study Device application
   Effect of shape and size on eigenvalues and function Any device geometry
   Dimension effect on I-V and C-V of MOSFET Planar/Gate-all-around
   Program/Erase/Retention of Flash memories FG, NC flash
   Study of DT/FN/TAT tunneling Planar/Gate-all-around
   Effect of mass, barrier height and well width on negative resistance region RTDs
WIthin VNIT Netwrok:

Public IP:


Contact us at  qudsim3d@gmail.com