{"id":1094,"date":"2024-05-14T12:02:11","date_gmt":"2024-05-14T12:02:11","guid":{"rendered":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/?page_id=1094"},"modified":"2024-05-14T12:02:11","modified_gmt":"2024-05-14T12:02:11","slug":"qudsim","status":"publish","type":"page","link":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/qudsim\/","title":{"rendered":"QuDSim"},"content":{"rendered":"\n<figure class=\"wp-block-table\"><table><tbody><tr><td><strong>QuDSim 1.0<\/strong> &nbsp;3D Quantum Device Simulator &nbsp; QuDSim is a TCAD simulator developed at Centre for VLSI and Nanotechnology, VNIT, Nagpur to simulate electrical characteristics of Nanoscale devices. It is Finite-Element-Method (FEM) based tool that solve self-consistent Poisson-Schrodinger equation on 2D\/3D device geometry.&nbsp;The quantum tunnelling and transport are simulated by solving an open system effective mass Schrodinger equation considering plane waves in reservoirs\/contacts. &nbsp; <strong>Mission<\/strong> Provide simple and easy to use open source TCAD tool for students to get physical insight for existing devices&nbsp;and for researchers to explore new nano devices by integrating their device geometries, materials, and models. &nbsp; <strong>Features<\/strong> The web-based tool requires no high-end machines at the user\u2019s end Easy to use Graphical User Interface New materials can be added easily The tool runs on High-Performance Computer Cluster at VLSI &amp; Nanotechnology Centre Free!!! &nbsp; QuDSim is based on the following open source software packages and platform: <strong>Components<\/strong> <strong>Capabilities<\/strong> &nbsp; &nbsp;DUNE-FEM &nbsp; &nbsp;Solve any PDE on parallel computers not limited to Poisson-Schrodinger &nbsp; &nbsp;PETSc &amp; SLEPc &nbsp; Eigenvalues Solver &nbsp; Third and fourth order polynomial equation &nbsp; The non-homogeneous system of linear equation &nbsp; &nbsp;GMSH &nbsp; 3D finite element meshing &nbsp; &nbsp;HTML, JavaScript &nbsp; Graphical User Interface &nbsp; <strong>In-built Examples<\/strong> Few examples available to explore the functionality of the tool Bound\/Quasi bound energies and wavefunctions for ellipsoidal QD Gate leakage current for Gate-All-Around Nanowire FET Transmission probability and current for Metal\/Insulator\/Metal Transmission probability and current for Resonant Tunneling Diode The following examples can also be solved using QuDSim High\/Low-frequency CV characteristics for planar MOS Program\/Erase\/Retention characteristics of Nanocrystal Flash memory Transport calculations (Id-Vd) for planar MOSFET &nbsp; <strong>Study<\/strong> <strong>Device application<\/strong> &nbsp; &nbsp;Effect of shape and size on eigenvalues and function Any device geometry &nbsp; &nbsp;Dimension effect on I-V and C-V of MOSFET Planar\/Gate-all-around &nbsp; &nbsp;Program\/Erase\/Retention of Flash memories FG, NC flash &nbsp; &nbsp;Study of DT\/FN\/TAT tunneling Planar\/Gate-all-around &nbsp; &nbsp;Effect of mass, barrier height and well width on negative resistance region RTDs<\/td><\/tr><tr><td><a href=\"http:\/\/192.168.7.182:5555\/QuDSim\">WIthin VNIT Netwrok: http:\/\/192.168.7.182:5555\/QuDSim<\/a> Public IP:&nbsp;<a href=\"http:\/\/117.205.13.231:5555\/QuDSim\">http:\/\/117.205.13.231:5555\/QuDSim<\/a> &nbsp; <strong>Contact us at&nbsp;<\/strong><strong>&nbsp;<\/strong><a href=\"mailto:qudsim3d@gmail.com\"><strong>qudsim3d@gmail.com<\/strong><\/a><\/td><\/tr><\/tbody><\/table><\/figure>\n","protected":false},"excerpt":{"rendered":"<p>QuDSim 1.0 &nbsp;3D Quantum Device Simulator &nbsp; QuDSim is a TCAD simulator developed at Centre for VLSI and Nanotechnology, VNIT, Nagpur to simulate electrical characteristics of Nanoscale devices. It is Finite-Element-Method (FEM) based tool that solve self-consistent Poisson-Schrodinger equation on 2D\/3D device geometry.&nbsp;The quantum tunnelling and transport are simulated by solving an open system effective [&hellip;]<\/p>\n","protected":false},"author":3,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-1094","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/wp-json\/wp\/v2\/pages\/1094","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/wp-json\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/wp-json\/wp\/v2\/comments?post=1094"}],"version-history":[{"count":1,"href":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/wp-json\/wp\/v2\/pages\/1094\/revisions"}],"predecessor-version":[{"id":1095,"href":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/wp-json\/wp\/v2\/pages\/1094\/revisions\/1095"}],"wp:attachment":[{"href":"https:\/\/vnit.ac.in\/engineering\/cvlsi\/wp-json\/wp\/v2\/media?parent=1094"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}