QuDSim 1.0 3D Quantum Device Simulator QuDSim is a TCAD simulator developed at Centre for VLSI and Nanotechnology, VNIT, Nagpur to simulate electrical characteristics of Nanoscale devices. It is Finite-Element-Method (FEM) based tool that solve self-consistent Poisson-Schrodinger equation on 2D/3D device geometry. The quantum tunnelling and transport are simulated by solving an open system effective mass Schrodinger equation considering plane waves in reservoirs/contacts. Mission Provide simple and easy to use open source TCAD tool for students to get physical insight for existing devices and for researchers to explore new nano devices by integrating their device geometries, materials, and models. Features The web-based tool requires no high-end machines at the user’s end Easy to use Graphical User Interface New materials can be added easily The tool runs on High-Performance Computer Cluster at VLSI & Nanotechnology Centre Free!!! QuDSim is based on the following open source software packages and platform: ComponentsCapabilities DUNE-FEM Solve any PDE on parallel computers not limited to Poisson-Schrodinger PETSc & SLEPc Eigenvalues Solver Third and fourth order polynomial equation The non-homogeneous system of linear equation GMSH 3D finite element meshing HTML, JavaScript Graphical User Interface In-built Examples Few examples available to explore the functionality of the tool Bound/Quasi bound energies and wavefunctions for ellipsoidal QD Gate leakage current for Gate-All-Around Nanowire FET Transmission probability and current for Metal/Insulator/Metal Transmission probability and current for Resonant Tunneling Diode The following examples can also be solved using QuDSim High/Low-frequency CV characteristics for planar MOS Program/Erase/Retention characteristics of Nanocrystal Flash memory Transport calculations (Id-Vd) for planar MOSFET StudyDevice application Effect of shape and size on eigenvalues and function Any device geometry Dimension effect on I-V and C-V of MOSFET Planar/Gate-all-around Program/Erase/Retention of Flash memories FG, NC flash Study of DT/FN/TAT tunneling Planar/Gate-all-around Effect of mass, barrier height and well width on negative resistance region RTDs
